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12401-56-8 Hafnium silicide 12564 Alfa Aesar

12564 Hafnium silicide. 12564. Hafnium silicide. CAS Number. 12401-56-8. Synonyms. SDS Certificate of Analysis Product Specification Technical Inquiry. Stock No. Size.

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Obtaining Hafnium Silicides by the Mixing Method

95 nm hafnium layers are deposited on (100) oriented p‐type silicon samples: ϱ = 0.35 Ωcm. The HfSi formation is induced by two methods: thermal annealing and ion implantation of Xe ions (E = 150 to

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Hafnium Silicide AMERICAN ELEMENTS

Hafnium Silicide is generally immediately available in most volumes. High purity, submicron and nanopowder forms may be considered. American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British

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Hafnium Silicide Silicon Metal Powder HfSi2 CAS 12401-56-8

Brief introduction of Hafnium silicide HfSi2 . Hafnium (atomic symbol: Hf, atomic number: 72) is a Block D, Group 4, Period 6 element with an atomic weight of 178.49. In its elemental form, hafnium has a lustrous silvery-gray appearance. Hafnium does not exist as a free element in nature. It is found in zirconium compounds such as zircon.

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US6986834B2 Hafnium silicide target and manufacturing

Thereby obtained is a hafnium silicide target, and the manufacturing method thereof, suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film, superior in embrittlement resistance, having a low generation of particles, and which is not likely to cause ignition of sintering powder or explosion

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Electrochemical synthesis of hafnium silicides SpringerLink

Up to10%cash back· Jul 29, 2009· The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi 2 is obtained using galvanostatic electrolysis.

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Hafnium silicide formation on Si ( 001 ) Request PDF

The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi2 is obtained using galvanostatic electrolysis. View.

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Electrochemical synthesis of hafnium silicides

The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi2 is obtained using galvanostatic electrolysis. Discover the world's

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(PDF) Hafnium silicide formation on Si(100) upon annealing

Aug 16, 2006· Hafnium silicide formation on Si (100) upon annealing A. de Siervo, 1,2,* C. R. Flüchter, 1 D. W eier, 1 M. Schürmann, 1 S. Dreiner, 1 C. W estphal, 1

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Structure determination of three-dimensional hafnium

Dec 15, 2008· Dec 15, 2008· Rectangular Hf silicide islands in two domains were obtained by electron beam evaporation of metallic hafnium onto a (2 × 1)-reconstructed Si(1 0 0) surface and subsequent annealing at 750 °C. While the Si 2p photoelectron signal was decomposed into several chemical components, only one chemical component of hafnium was evident in the

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US6986834B2 Hafnium silicide target and manufacturing

Thereby obtained is a hafnium silicide target, and the manufacturing method thereof, suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film, superior in embrittlement resistance, having a low generation of particles, and which is not likely to cause ignition of sintering powder or explosion

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Electrochemical synthesis of hafnium silicides

The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi2 is obtained using galvanostatic electrolysis. Discover the world's

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Hafnium silicide formation on Si ( 001 ) Request PDF

The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi2 is obtained using galvanostatic electrolysis. View.

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Electrochemical synthesis of hafnium silicides SpringerLink

Jul 29, 2009· The method of cyclic voltammetry was used to study cathodic processes in a molten salt of NaCl-KCl-NaF (10 wt %)-K 2 HfF 6-K 2 SiF 6.The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi 2 is obtained using galvanostatic electrolysis.

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(PDF) Multiple phase structures of Hf silicide

Sep 01, 2002· Hafnium silicide islanding occurs spontaneously when metallic Hf is deposited on a Si(001) surface and subsequently annealed at 750 °C. First results were obtained

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US7674446B2 Hafnium silicide target for forming gate

A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi 1.02-2.00 . The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO 2 film.

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(PDF) Structure determination of three-dimensional hafnium

Photoelectron diffraction study and structure determination of ultrathin hafnium silicide layers on silicon(100) using Mg Kα radiation and synchrotron light. By G. Kleiman. Hafnium silicide formation on Si(100) upon annealing. By G. Kleiman and A. Pancotti.

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(PDF) Photoelectron diffraction study and structure

Photoelectron diffraction study and structure determination of ultrathin hafnium silicide layers on silicon(100) using Mg Kα radiation and synchrotron light. Journal of Electron Spectroscopy and Related Phenomena, 2007. G. Kleiman. D. Weier. M. Schürmann.

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(PDF) Characterization of HfO2 and Hafnium Silicate Films

Scaling limits of hafnium–silicate films for gate-dielectric applications Appl. Phys. Lett. 83,788 (2003); 10.1063/1.1594829 Plasma-enhanced chemical vapor deposition and characterization of

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The melting point of hafnium carbide is the highest

Feb 04, 2021· The hafnium (IV) oxide obtained by reducing the hafnium carbide powder with carbon is at 1800~2000°C. It takes a long time to remove all oxygen. Alternatively, a high-purity HfC coating can be obtained from a gas mixture of methane, hydrogen and vaporized chlorinated chloride (IV) by chemical vapor deposition.

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Hafnium silicate formation by ultra-violet/ozone oxidation

In this study, ~3-nm-thick hafnium silicate films were produced by sputter deposition of hafnium silicide films on precleaned SixGe1-x(100), with subsequent UV-O3 oxidation at room temperature.

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MATERIAL SAFETY DATA SHEET

Hafnium Silicide Section 2- HAZARDOUS INGREDIENTS Note: Products under normal conditions do not represent an inhalation, ingestion or contact health hazard. MATERIAL OR COMPONENT CAS NUMBER WT% EXPOSURE LIMITS OSHA PEL (Mg/M3) ACGIH TLV(MG/M3) HfSi² 12401-56-8 At% 0.5mg(Hf)/m³ 0.5mg(Hf)/m³ Section 3- PHYSICAL DATA

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In situ, real-time characterization of silicide

Evidence was obtained indicating that the coarsening of the silicide islands is strongly influenced by local variations in the size, shape, and number of nanostructures on the surface. The titanium, hafnium, and zirconium silicide nanostructures were observed to grow via Ostwald ripening and attractive migration and coalescence (AMC) at

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The single compound with the highest melting point on

Mar 15, 2021· The single compound with the highest melting point on Earth is hafnium carbide, which has a melting point of 3890 degrees Celsius. At present, the highest melting point known on earth is the hafnium compound, tetratantalum hafnium pentacarbide, melting point 4215℃. Hafnium, having an atomic number of 72, is a shiny silvery-gray transition metal.

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Obtaining Hafnium Silicides by the Mixing Method

95 nm hafnium layers are deposited on (100) oriented p‐type silicon samples: ϱ = 0.35 Ωcm. The HfSi formation is induced by two methods: thermal annealing and ion implantation of Xe ions (E = 150 to

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Electrochemical synthesis of hafnium silicides SpringerLink

Jul 29, 2009· The method of cyclic voltammetry was used to study cathodic processes in a molten salt of NaCl-KCl-NaF (10 wt %)-K 2 HfF 6-K 2 SiF 6.The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi 2 is obtained using galvanostatic electrolysis.

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Hafnium silicide formation on Si ( 001 ) Request PDF

The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi2 is obtained using galvanostatic electrolysis. View.

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(PDF) Structure determination of three-dimensional hafnium

Photoelectron diffraction study and structure determination of ultrathin hafnium silicide layers on silicon(100) using Mg Kα radiation and synchrotron light. By G. Kleiman. Hafnium silicide formation on Si(100) upon annealing. By G. Kleiman and A. Pancotti.

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(PDF) Photoelectron diffraction study and structure

Photoelectron diffraction study and structure determination of ultrathin hafnium silicide layers on silicon(100) using Mg Kα radiation and synchrotron light. Journal of Electron Spectroscopy and Related Phenomena, 2007. G. Kleiman. D. Weier. M. Schürmann.

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Global Hafnium Silicide Market 2021 Thorough Research

Apr 26, 2021· Apr 26, 2021 (WiredRelease via Comtex) -- Made after a conscientious study on the Worldwide Hafnium Silicide Market profit and loss (2021-2031), the Hafnium...

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Hafnium silicate formation by ultra-violet/ozone oxidation

In this study, ~3-nm-thick hafnium silicate films were produced by sputter deposition of hafnium silicide films on precleaned SixGe1-x(100), with subsequent UV-O3 oxidation at room temperature.

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High-Temperature Deformation of Alloys of the

Particles of silicides, hafnium oxides, and matrix layers in the samples of both alloys have the same sizes. Alloys differ in chemical composition, type of silicide and morphology of the structure. In the alloy from the powder fraction (50+) there are eutectic colonies separated by clusters of hafnium

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(PDF) Chemical vapor deposition and characterization of

The films were shown to consist of monoclinic HfO2 and to contain hafnium silicide and silicate at the HfO2/Si interface. The presence of hafnium silicide was attributed to oxygen deficiency induced by argon ion sputtering of the film during XPS analysis. the Hf 4f spectra showed a new feature as a were obtained using 3 keV Ar+ ion

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The melting point of hafnium carbide is the highest

Feb 04, 2021· The hafnium (IV) oxide obtained by reducing the hafnium carbide powder with carbon is at 1800~2000°C. It takes a long time to remove all oxygen. Alternatively, a high-purity HfC coating can be obtained from a gas mixture of methane, hydrogen and vaporized chlorinated chloride (IV) by chemical vapor deposition.

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Preparation and magnetic properties of manganese silicide

Mar 01, 2018· Manganese silicide (Mn 5 Si 3) nanorods were successfully prepared using manganese sesquioxide (Mn 2 O 3), silicon (Si) and metallic magnesium (Mg) as starting materials via a solid-state route in an autoclave. X-ray powder diffraction pattern revealed that the obtained product was hexagonal phase Mn 5 Si 3.

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Hafnium silicide (cas 12401-56-8) SDS(Safety Data Sheet

Hafnium silicide (CAS No. 12401-56-8) SDS. CAS No: 12401-56-8; Molecular Weight: 234.66; Molecular Formula: HFSI 2; Names and Identifiers Properties Safety and Handling Computational chemical data 12 Suppliers

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(PDF) Nitridation and oxynitridation of Si to control

We investigated the effectiveness of SiN and SiON barrier layer in controlling the interfacial reaction between Atomic Layer Deposited (ALD) HfO2 film and the Si substrate. The HfO2 film was found to form silicate and silicide at the interface with

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HAFNIUM IN MOLTEN SALTS: ELECTROCHEMISTRY,

on hafnium coatings roughness was established. Different compounds of hafnium such as: hafnium diboride, hafnium-niobium and hafnium-copper alloys, silicides of hafnium were obtained by electrochemical synthesis. The fields of application of the hafnium and composite materials on the base of hafnium obtained from molten salts were shown